PUBLICATIONS OF M.J. AZIZ
last updated 7/16/01
137. P.G. Evans, O.D. Dubon, J.F. Chervinsky, M.J. Aziz, F. Spaepen, and J.A. Golovchenko, "Growth and Evaporation of Pb Layers on As-Terminated Si(111)", submitted to Applied Physics Letters.
108. M.J. Aziz, "Introduction to 'The Molecular Mechanism of Solidification', by J.W. Cahn, W.B. Hillig and G.W. Sears", in The Selected Works of John W. Cahn, eds. W.C. Johnson and W.C. Carter (TMS-AIME, Warrendale, PA, 1998), pp. 207-9.
97. J.W. McCamy and M.J. Aziz, "Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition", Materials Research Society Symposia Proceedings 441, 621 (1997).
90. S. Mitha, M.J. Aziz, D. Schiferl and D.B. Poker, "Effect of Pressure on As Diffusion in Ge: Evidence Against Simple Vacancy Mechanism", Defect and Diffusion Forum 143-147, 1041 (1997).
88. M.J. Aziz, "Experimental Constraints on Nonequilibrium Interface Kinetic Models", Materials Science and Engineering A 226-228, 255 (1997).
83. S.D. Theiss, F. Spaepen, M.J. Aziz, "Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers", Appl. Phys. Lett. 68, 1226 (1996).
82. S.D. Theiss, F. Spaepen, M.J. Aziz, "Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion," Materials Research Society Symposia Proceedings 356, 15 (1995).
81. M.J. Aziz, "Interface Attachment Kinetics in Alloy Solidification", Metallurgical & Materials Transactions A 27, 671-686 (1996).
80. W.B. Carter and M.J. Aziz, "Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon", Materials Research Society Symposia Proceedings, 356, 87 (1995).
79. D.P. Brunco, M.O. Thompson, D.E. Hoglund, M.J. Aziz and H.-J. Gossmann, "Germanium Partitioning in Silicon During Rapid Solidification," Journal of Applied Physics78, 1575-1582 (1995).
78. D.P. Brunco, M.O. Thompson, D.E. Hoglund and M.J. Aziz, "Germanium Partitioning and Interface Stability During Rapid Solidification of GeSi Alloys," Materials Research Society Symposia Proceedings, 354, 653 (1995).
77. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Nonequilibrium Partitioning During Rapid Solidification of Si-As Alloys", Journal of Crystal Growth148, 172-182 (1995).
76. M.J. Aziz, "Solidification - Rapid Growth Kinetics", Encyclopedia of Advanced Materials (Pergamon Press, Oxford, 1994), pp. 2187-2194.
75. R. Reitano, P.M. Smith and M.J. Aziz, "Solute Trapping of Group III, IV, and V Elements in Silicon by an Aperiodic Stepwise Growth Mechanism," Journal of Applied Physics 76, 1518 (1994).
74. N. Isono, P.M. Smith, D. Turnbull, and M.J. Aziz, "Anomalous Diffusion of Fe in Liquid Al Measured by the Pulsed Laser Technique", Metallurgical & Materials Transactions A 27, 725-730 (1996).
73. P.M. Smith and M.J. Aziz, "Solute Trapping in Aluminum Alloys", Acta Metallurgica et Materialia 42, 3515 (1994).
71. S.D. Theiss, S. Mitha, F. Spaepen and M.J. Aziz, "Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure", Materials Research Society Symposia Proceedings321, 59 (1994).
70. R.Reitano, P.M. Smith and M.J. Aziz, "Trends in Solute Segregation Behavior During Silicon Solidification", Materials Research Society Symposia Proceedings321, 479 (1994).
69. M.J. Aziz, "Questions and Answers on the Activation Strain", Materials Research Society Symposia Proceedings 321, 449 (1994).
68. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification", Materials Science and Engineering A178, 167-170 (1994).
67. J.A. Kittl, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Absence of Solute Drag in Solidification", Applied Physics Letters 64, 2359 (1994).
66. M.J. Aziz and W.J. Boettinger, "On the Transition from Short-Range Diffusion-Limited to Collision-Limited Growth in Alloy Solidification", Acta Metallurgica et Materialia42, 527-537 (1994).
65. D.P. Brunco, J.A. Kittl, C.E. Otis, P.M. Goodwin, M.O. Thompson and M.J. Aziz, "Time-resolved Temperature Measurements During Pulsed Laser Irradiation Using Thin Film Metal Thermistors", Review of Scientific Instruments 64, 2615-2623 (1993).
64. K. Eckler, D.M. Herlach and M.J. Aziz, "Search for a Solute-Drag Effect in Dendritic Solidification", Acta Metallurgica et Materialia 42, 975-979 (1994).
63. T. Kaplan, M.J. Aziz and L.J. Gray, "Restricted Applicability of Onsager's Reciprocity Relations to Models of Interface Motion", Journal of Chemical Physics99, 8031-8037 (1993).
62. J.A. Kittl, R. Reitano, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification", Materials Research Society Symposia Proceedings279, 691-697 (1993).
61. P.M. Smith, R. Reitano and M.J. Aziz, "Solute Trapping in Metals", Materials Research Society Symposia Proceedings 279, 749-755 (1993).
60. J.A. Kittl, R. Reitano, M.J. Aziz, D.P. Brunco and M.O. Thompson, "Time-Resolved Temperature Measurements During Rapid Solidification of Si-As Alloys Induced by Pulsed-Laser Melting", Journal of Applied Physics 73, 3725-3733 (1993).
59. J.A. West and M.J. Aziz, "Kinetic Disordering of Intermetallic Compounds by Rapid Solidification", The Metallurgical Society Symposia Proceedings, Kinetics of Ordering Transformations in Metals, edited by H. Chen and V.K. Vasudevan (TMS, Warrendale, PA, 1992), pp. 177-184.
58. J.W. Elmer, M.J. Aziz, L.E. Tanner, P.M. Smith and M.A. Wall, "Formation of Bands of Ultrafine Beryllium Particles During Rapid Solidification of Al-Be Alloys: Modeling and Direct Observations", Acta Metallurgica et Materialia 42, 1065-1080 (1994).
57. J.A. West and M.J. Aziz, "Kinetic Disordering of Intermetallic Compounds Through First- and Second-Order Transitions by Rapid Solidification", in Ordering and Disordering in Alloys, edited by A.-R. Yavari (Elsevier, London, 1992), pp. 23-30.
56. M.J. Aziz, "The Mechanism of Solid Phase Epitaxy", in Crucial Issues in Semiconductor Materials and Processing Technologies, edited by S. Coffa, F. Priolo, E. Rimini and J.M. Poate, NATO ASI Series (Kluwer, Dordrecht, The Netherlands 1992), pp. 465-476.
55. G.-Q. Lu, E. Nygren and M.J. Aziz, "Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point Defect Mechanisms", Journal of Applied Physics 70, 5323-5345 (1991).
53. M.J. Aziz, P.C. Sabin and G.-Q. Lu, "Effect of Nonhydrostatic Stress on Crystal Growth Kinetics", Materials Research Society Symposia Proceedings202, 567-572 (1991).
52. K.-R. Lee, J.A. West, P.M. Smith, M.J. Aziz and J.A. Knapp, "Measurements of To Temperatures of Supersaturated Si-As Alloys", Materials Research Society Symposia Proceedings 205, 301-306 (1992).
51. D.E. Hoglund and M.J. Aziz, "Interface Stability During Rapid Directional Solidification", Materials Research Society Symposia Proceedings205, 325-329 (1992).
50. G.-Q. Lu, E. Nygren and M.J. Aziz, "Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms", Materials Research Society Symposia Proceedings205, 33-38 (1992).
49. M.J. Aziz, P.C. Sabin and G.-Q. Lu, "The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal Growth Kinetics", Physical Review B 44, 9812-9816 (1991).
47. G. Devaud, C. Hayzelden, M.J. Aziz and D. Turnbull, "Growth of Quartz from Amorphous Silica at Ambient Pressure", Journal of Non-Crystalline Solids134, 129-132 (1991); erratum 149, 283 (1992).
46. D.E. Hoglund, M.J. Aziz, S.R. Stiffler, M.O. Thompson, J.Y. Tsao and P.S. Peercy, "Effect of Nonequilibrium Interface Kinetics on Cellular Breakdown of Planar Interface During Rapid Solidification of Si-Sn", Journal of Crystal Growth109, 107-112 (1991).
45. W.J. Boettinger, L.A. Bendersky, J.A. West, M.J. Aziz and J. Cline, "Disorder Trapping in Ni2TiAl", Materials Science and EngineeringA133, 592-595 (1991).
44. E. Chason and M.J. Aziz, "Effect of Pressure on Crystallization Kinetics of Cordierite Glass", Journal of Non-Crystalline Solids 130, 204-210 (1991).
43. H.A. Atwater, J.A. West, P.M. Smith, M.J. Aziz, J.Y. Tsao, P.S. Peercy and M.O. Thompson, "Time-Resolved Measurements of Solidification and Undercooling in Metals and Alloys", Materials Research Society Symposia Proceedings157, 369-375 (1990).
42. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Pressure-Enhanced Solid Phase Epitaxy of Ge", Applied Physics Letters 56, 137-139 (1990).
41. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Interferometric Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si," Applied Physics Letters 54, 2583-2585 (1989).
40. M.J. Aziz and D. Turnbull, "Crystal Growth: Growth Processes", in Encyclopedia of Science & Technology (McGraw-Hill, New York, 1992), pp. 588-589.
39. W.J. Boettinger and M.J. Aziz, "Theory for the Trapping of Disorder and Solute in Intermetallic Phases by Rapid Solidification", Acta Metallurgica37, 3379-3391 (1989).
38. G. Devaud, M.J. Aziz and D. Turnbull, "High Pressure Crystallization of As2S3", Journal of Non-Crystalline Solids 109, 121-128 (1989).
37. G.-Q. Lu, E. Nygren, M.J. Aziz, D. Turnbull and C.W. White, "Time-Resolved Reflectivity Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell", Materials Research Society Symposia Proceedings 100, 435-440 (1988).
36. J.Y. Tsao, M.J. Aziz, P.S. Peercy and M.O. Thompson, "Interface Velocity Transients During the Melting of a-Si/c-Si Thin Films", Materials Research Society Symposia Proceedings 100, 519-524 (1988).
35. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification: Theory and Experiment", Materials Science and Engineering 98, 369-372 (1988).
34. C.W. White, L.A. Boatner, P.S. Sklad, C.J. McHargue, J. Rankin, G.C. Farlow and M.J. Aziz, "Ion Implantation and Annealing of Crystalline Oxides and Ceramic Materials", Nuclear Instruments and Methods B32, 11-22 (1988).
33. C.W. White, L.A. Boatner, J. Rankin and M.J. Aziz, "Ion Implantation and Annealing of SrTiO3 and CaTiO3", Materials Research Society Symposia Proceedings 93, 9-14 (1987).
32. T. Kaplan, M.J. Aziz and L.J. Gray, "Application of Onsager's Reciprocity Relations to Interface Motion During Phase Transformations", Journal of Chemical Physics 90, 1133-1140 (1989).
31. C.W. White, L.A. Boatner, P.S. Sklad, C.J. McHargue, S.J. Pennycook, M.J. Aziz, G.C. Farlow and J. Rankin, "Ion Implantation and Annealing of Oxides", Materials Research Society Symposia Proceedings 74, 357-364 (1987).
30. J.Y. Tsao, M.J. Aziz, P.S. Peercy and M.O. Thompson, "Transition-State Model for Entropy-Limited Freezing", Materials Research Society Symposia Proceedings 74, 117-122 (1987).
29. M.J. Aziz, "Nonequilibrium Interface Kinetics During Rapid Solidification", Materials Research Society Symposia Proceedings 74, 31-44(1987) and 80, 25-38 (1987).
28. L.M. Goldman and M.J. Aziz, "Aperiodic Stepwise Growth Model for the Velocity and Orientation Dependence of Solute Trapping", Journal of Materials Research 2, 524-527 (1987).
27. T. Kaplan, M.J. Aziz and L.J. Gray, "Application of Onsager's Reciprocity Relations to Alloy Solidification", Materials Research Society Symposia Proceedings100, 603-608 (1988).
26. M.J. Aziz and T. Kaplan, "Continuous Growth Model for Interface Motion During Alloy Solidification", Acta Metallurgica 36, 2335-2347 (1988).
24. M.J. Aziz and C.W. White, "Solute Trapping in Silicon by Lateral Motion of {111} Ledges", Physical Review Letters 57, 2675-2678 (1986).
22. C.W. White, P.S. Sklad, L.A. Boatner, G.C. Farlow, C.J. McHargue, B.C. Sales and M.J. Aziz, "Ion Implantation and Annealing of Crystalline Oxides", Materials Research Society Symposia Proceedings 60, 337-344 (1986).
21. M.J. Aziz and J.D. Budai, "Precipitation of Icosahedral Al-Mn During Pulsed Laser Melting", Journal of Materials Research 1, 401-404 (1986).
20. J.Y. Tsao, M.J. Aziz, M.O. Thompson and P.S. Peercy, "Asymmetric Melting and Freezing Kinetics in Silicon", Physical Review Letters 56, 2712-2715 (1986).
16. M.J. Aziz, "Modeling and Measurements of Solute Trapping", in Laser Surface Treatment of Metals, eds. C.W. Draper and P. Mazzoldi (Martinus Nijhoff Publishers, The Hague, Netherlands, 1986), pp. 649-662.
15. C.W. White and M.J. Aziz, "Energy Deposition, Heat Flow, and Rapid Solidification During Laser and Electron Beam Irradiation of Materials", in Surface Alloying by Ion, Electron, and Laser Beams, eds. L.E. Rehn, S.T. Picraux and H. Wiedersich (American Society for Metals, Metals Park, Ohio, 1986), pp. 19-50.
14. M.J. Aziz, C.W. White, J. Narayan, and B. Stritzker, "Melting of Crystalline and Amorphous Silicon by Ruby, XeCl and KrF Laser Irradiation," in Energy Beam-Solid Interactions and Transient Thermal Processing, eds. V.T. Nguyen and A.G. Cullis (Éditions de Physique, Paris, 1985), p. 231-236.
13. J. Narayan, R.V. James, O.W. Holland and M.J. Aziz, "Pulsed Excimer and CO2 Laser Annealing of Ion Implanted Silicon", Journal of Vacuum Science and Technology A 3, 1836-1838 (1985).
12. E. Nygren, M.J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson and R. Hull, "Effect of Pressure on the Solid Phase Epitaxial Regrowth Rate of Si", Applied Physics Letters47, 232-233 (1985).
11. E. Nygren, M.J. Aziz, D. Turnbull, J.M. Poate, D.C. Jacobson and R. Hull, "Pressure Dependence of Arsenic Diffusivity in Silicon", Applied Physics Letters 47, 105-107 (1985).
10. M.J. Aziz, E. Nygren, W.H. Christie, C.W. White and D. Turnbull, "Effect of Pressure on Self Diffusion in Crystalline Silicon", Materials Research Society Symposia Proceedings 36, 101-104 (1985).
9. E. Nygren, M.J. Aziz, D. Turnbull, J.F. Hays, J.M. Poate, D.C. Jacobson and R. Hull, "Pressure Dependence of Arsenic Diffusivity in Silicon", Materials Research Society Symposia Proceedings 36, 77-82 (1985).
8. M.J. Aziz, J.Y. Tsao, M.O. Thompson, P.S. Peercy, C.W. White and W.H. Christie, "A Test of Two Solute Trapping Models", Materials Research Society Symposia Proceedings35, 153-158 (1985).
7. M.J. Aziz, E. Nygren, J.F. Hays and D. Turnbull, "Crystal Growth Kinetics of Boron Oxide Under Pressure", Journal of Applied Physics 57, 2233-2242 (1985).
6. J. Narayan, C.W. White, M.J. Aziz, B. Stritzker and A. Walthuis, "Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers", Journal of Applied Physics 57, 564-567 (1985).
5. J. Narayan, C.W. White, O.W. Holland and M.J. Aziz, "Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers", Journal of Applied Physics 56, 1821-1830 (1984).
4. M.J. Aziz, "Crystal Growth and Solute Trapping", Materials Research Society Symposium Proceedings23, 369-374 (1984).
3. M.J. Aziz, "Dissipation-Theory Treatment of the Transition from Diffusion-Controlled to Diffusionless Solidification", Applied Physics Letters 43, 552-554 (1983).
2. M.J. Aziz, "An Atomistic Model of Solute Trapping", in Rapid Solidification Processing: Principles and Technologies III ed. R. Mehrabian, (National Bureau of Standards, Gaithersburg, MD, 1982), p. 113-117.
1.
M.J. Aziz, "Model for Solute Redistribution During Rapid Solidification",
Journal
of Applied Physics 53, 1158-1168 (1982).