Fig. 1. (a) Melt depth vs. time for a 1.0 J/cm2 excimer laser pulse
onto a Si sample uniformly preheated to 1500 K by a continuous-wave CO2
laser. (b) Initial solute depth profile following ion implantation
and before laser melting. (c)-(h) Calculated solute concentration-depth
profiles at several instants during melting and rapid plane-front solidification.
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