Publications
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1."Magnetoresistance in an asymmetric Ga1−xMnxAs resonant tunneling diode," E. Likovich, K. Russell, W. Yi, V. Narayanamurti, K.-C. Ku, M. Zhu, and N. Samarth, Phys. Rev. B 80, 201307(R) (2009) [pdf]
2."Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy," W. Yi, V. Narayanamurti, H. Lu, M. A. Scarpulla, A. C. Gossard, Y. Huang, J.-H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 95, 112102 (2009) [pdf]
3."Growth of ZnO nanowires catalyzed by size-dependent melting of Au nanoparticles," E. W. Petersen, E. M. Likovich, K. J. Russell, and V. Narayanamurti, Nanotechnology 20, 405603 (2009) [pdf]
4."Direct injection tunnel spectroscopy of a p-n junction," E. M. Likovich, K. J. Russell, V. Narayanamurti, H. Lu, and A. C. Gossard, Appl. Phys. Lett. 95, 022106 (2009) [pdf]
5."Carrier density and magneto-resistance measurements on vanadium oxide thin films across the phase transition boundary," D. Ruzmetov, D. Heiman, B. Claflin, V. Narayanamurti and S. Ramanathan, Phys. Rev. B 75, 153107 (2009)
6."Size-dependent impurity activation energy in GaN nanowires," J. Yoon, A. M. Girgis, I. Shalish, L. R. Ram-Mohan, and V. Narayanamurti, Appl. Phys. Lett. 94, 142102 (2009) [pdf]
7."Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures," W. Yi, A. J. Stollenwerk, V. Narayanamurti Surf. Sci. Rep. 64, 169 (2009) [pdf]
8."Epitaxial Catalyst-Free Growth of InN Nanorods on c-Plane Sapphire," I. Shalish, G. Seryogin, W. Yi, J. M. Bao, M. A. Zimmler, E. Likovich, D. C. Bell, F. Capasso, and V. Narayanamurti, Nanoscale Res. Lett. 4, 532 (2009) [pdf]
1."Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode," E. Likovich, K. Russell, W. Yi, V. Narayanamurti, K.-C. Ku, M. Zhu, and N. Samarth, Proceedings of IEEE 66th Annual Device Research Conference (DRC), Santa Barbara, CA. pp. 167-8 (2008) [pdf]
2."Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting," T. Kim, K. Alberi, O. D. Dubon, M. J. Aziz, and V. Narayanamurti, J. Appl. Phys. 104, 113722 (2008) [pdf]
3."Infra-red reflectance and photoemission spectroscopy studies across the phase transition boundary in thin film vanadium oxide," D. Ruzmetov, K. Zawilski, S.D. Senanayake, V. Narayanamurti and S. Ramanathan, J. Phys.: Cond. Matt. 20, 465204 (2008)
4."Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting," T. Kim, M. J. Aziz, and V. Narayanamurti, Appl. Phys. Lett. 93, 102117 (2008) [pdf]
5."Correlation between metal-insulator transition characteristics and electronic structure changes in vanadium oxide thin films," D. Ruzmetov, S. D. Senanayake, V. Narayanamurti and S. Ramanathan, Phys. Rev. B 77, 195442 (2008)
6."Scalable Fabrication of Nanowire Photonic and Electronic Circuits Using Spin-on Glass," M. A. Zimmler, D. Stichtenoth, C. Ronning, W. Yi, V. Narayanamurti, T. Voss, and F. Capasso, Nano. Lett. 8, 1695 (2008) [pdf]
1."Structure-functional property relationships in RF-sputtered vanadium oxide thin films," D. Ruzmetov, K. Zawilski, V. Narayanamurti and S. Ramanathan, J. Appl. Phys. 102, 113715 (2007)
2."A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection," M. A. Zimmler, J. Bao, I. Shalish, W. Yi, V. Narayanamurti, and F. Capasso, Nanotechnology 18, 395201 (2007) [pdf]
3."Electroluminescence from single nanowires by tunnel injection: An experimental study," M. A. Zimmler, J. Bao, I. Shalish, W. Yi, J. Yoon, V. Narayanamurti, and F. Capasso, Nanotechnology 18, 235205 (2007) [pdf]
4."Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study," W. Yi, V. Narayanamurti, J. M. O. Zide, S. R. Bank, and A. C. Gossard, Phys. Rev. B 75, 115333 (2007) [pdf]
1."Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy," K. J. Russell, V. Narayanamurti, I. Appelbaum, M. P. Hanson, and A. C. Gossard, Phys. Rev. B 74, 205330 (2006) [pdf]
2."Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations," Wei Yi, Ian Appelbaum, Kasey J. Russell, Venkatesh Narayanamurti, Richard Schalek, Micah P. Hanson, and Arthur C. Gossard, J. Appl. Phys. 100, 013105 (2006). [pdf]
3."Linear photon upconversion of 400 meV in an AlGaInP/GaInP quantum well heterostructure to visible light at room temperature," M. R. Olson, K. J. Russell, V. Narayanamurti, J. M. Olson, and I. Appelbaum, Appl. Phys. Lett. 88, 161108 (2006).
1."Catalytic hydride vapour phase epitaxy growth of GaN nanowires," G. Seryogin, I. Shalish, W. Moberlychan, V. Narayanamurti, Nanotechnology 16 (2005) 2342–2345. [pdf]
2."Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces," W. Yi, I. I. Kaya, I. B. Altfeder, I. Appelbaum, D. M. Chen, and V. Narayanamurti, Rev. Sci. Instruments 76 , 063711 (2005). [pdf]
3."Transverse momentum nonconservation at the ErAs/GaAs interface," K. J. Russell, I. Appelbaum, V. Narayanmurti, M. P. Hanson, and A. C. Gossard, Phys. Rev. B 71, 121311(R) (2005). [pdf]
1."Avalanche spin-valve transistor," K.J. Russell, Ian Appelbaum, Wei Yi, D.J. Monsma, F. Capasso, C.M. Marcus, V. Narayanamurti, M. P. Hanson, and A. C. Gossard, Applied Physics Letters 85 , 4502 (2004).
2."Ballistic hole emission luminescence," Ian Appelbaum, K. J. Russell, I. Shalish, V. Narayanamurti, M. P. Hanson, and A. C. Gossard, Applied Physics Letters 85 , 2265 (2004).
3."Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope," Ian Appelbaum, K.J. Russell, M. Kozhevnikov, V. Narayanamurti, M.P. Hanson, and A.C. Gossard, Appled Physics Letters 84 , 547 (2004).
4."Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure," W. Yi, I. Appelbaum, K.J. Russell, V. Narayanamurti, M.P. Hanson, A.C. Gossard, Applied Physics Letters 85 , 1990 (2004) [pdf]
5."Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high-mobility GaAs/AlGaAs devices," R. G. Mani, J. H. Smit, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 193304 (2004); cond-mat/0303034.
6."Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices," R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smit, W. B. Johnson, and V. Umansky, Phys. Rev. B 69, 161306 (2004); cond-mat/0310474.
7."Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima," R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smit, W. B. Johnson, and V. Umansky, Phys. Rev. B 70, 1553310 (2004); cond-mat/0306388.
8."Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices," R. G. Mani, J. H. Smit, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Phys. Rev. Lett. 92, 146801 (2004); cond-mat/0311010.
9."Size dependent surface luminescence in ZnO nanowires," I. Shalish, H. Temkin, and V. Narayanamurti, Phys. Rev. B 69, 245401 (2004). [pdf]
1."Anisotropic Metal-Insulator Transition in Epitaxial Thin Films," I.B. Altfeder, X. Liang, D.M. Chen, and V. Narayanamurti, Physical Review Letters , submitted for publication.
2."Radiation Induced Zero-resistance States in GaAs/AlGaAs Heterostructures: Voltage-Current Characteristics and Intensity Dependence at the Resistance Minima," R.G. Mani, J.H. Smet, K. von Klitzing, V. Narayanamurti, W.B. Johnson, and V. Umansky, Physical Review Letters , submitted for publication
3."Ballistic Electron Emission Luminescence," I. Appelbaum, K.J. Russell, V. Narayanamurti, D.J. Monsma, C.M. Marcus, M.P. Hanson, A.C. Gossard, H. Temkin, and C.H. Perry, Applied Physics Letters , Vol. 82 , 4498 (2003) [pdf]
4."Room temperature electro-optic up-conversion via internal photoemission," K.J. Russell, I. Appelbaum, H. Temkin, C.H. Perry, V. Narayanamurti, M.P. Hanson and A.C. Gossard, Applied Physics Letters , Vol. 82 , No.18, 2960 (May, 2003) [pdf]
5."Nuclear spin based quantum information processing at high magnetic fields," R.G. Mani, W.B. Johnson, V. Narayanamurti, Nanotechnology , Vol. 14 , 515-522 (2003)
6."Experimental test of the planar tunneling model for ballistic electron emission spectroscopy," I. Appelbaum, R. Sheth, I. Shalish, K.J. Russell, and V. Narayanamurti, Physical Review B , Vol 67 , 155307 (2003) [pdf]
7."Measurement of the spin-orbit Zeeman magnetic field in a two-dimensional electron system with a small zero-field spin splitting," R.G. Mani, J.H. Smet, K. von Klitzing, V. Narayanamurti, W.B. Johnson, and V. Umansky, submitted to PRL, February, 2003.
8."Manipulation and Measurement of nuclear spin over the quantum Hall regime for quantum information processing," R.G. Mani, W. B. Johnson, and V. Narayanamurti, Japan Conference , Spring (2003) in press
9."Initialization of a nuclear spin system over the quantum Hall regime for quantum information processing," R. G. Mani, W. B. Johnson, and V. Narayanamurti, in the Proceedings of 15th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, Oxford, 5-9 August 2002, Institute of Physics Conference Series Number 171, edited by A. R. Long and J. H. Davies (IOP, Bristol, 2003) 1.6.
10."Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation," R. G. Mani, J. H. Smit, K. von Klitzing, V. Narayanamurti, W.B. Johnson, and V. Umansky, in the Proc. of The 26th Intl. Conf. on the Phys. of Semicon., Edinburgh, 29 July - 2 August 2002, IOP Conf. Ser. 171, eds. A. R. Long and J. H. Davies (IOP, Bristol, 2003) H112; cond-mat/0305507.
11."Nuclear spin based quantum information processing at high magnetic fields," R. G. Mani, W. B. Johnson, and V. Narayanamurti, Nanotechnology 14, 515 (2003).
1."Evolution of the GaN x P 1-x alloy band structure: A ballistic electron emission spectroscopic investigation," C.V. Reddy, R.E. Martinez II, V. Narayanamurti, Physical Review B , Vol. 66 , 235313 (2002) [pdf]
2."Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures," R.G. Mani, J.H. Smet, K. von Klitzing, V. Narayanamurti, W.B. Johnson and V. Umansky, Nature , Vol. 420 , 646 (December 12, 2002)
3."Electron transport through strongly coupled AlInP/GaInP superlattices," R.E. Martinez II, I. Appelbaum, C.V. Reddy, R. Sheth, K.J. Russell, V. Narayanamurti, J-H Ryou, U. Chowdhury, R.D. Dupuis, Applied Physics Letters , Vol. 81 , No.19, 6951 (November, 2002) [pdf]
4."Nuclear spin based quantum information processing at high magnetic fields," R.G. Mani, W. B. Johnson, V. Narayanamurti, Trends in NanoTechnology Ð TNT 2002 Conference , September, 2002.
5."Alternative paradigm for physical computing," I. Appelbaum, J.D. Joannopoulos, and V. Narayanamurti, Physical Review E , Vol. 66 , 066612 (2002).
6."Initialization of a nuclear spin system over the quantum Hall regime for quantum information processing," R.G. Mani, W.B. Johnson, and V. Narayanamurti, Semimag Conference Proceedings , August, 2002
7."Magnetoresistive response of a high mobility 2DES under electromagnetic wave excitation," R.G. Mani, J.H. Smet, K von Klitzing, V. Narayanamurti, WB Johnson and V. Umansky, Proceedings of the 26th International Conference in Physics of Semiconductors , August, 2002
8."Imaging sub-surface reflection phase with quantized electrons," I. Altfeder, V. Narayanamurti and D.M. Chen, Physical Rev. Lett. , Vol 88 , No. 20, 206801 (May 2002) [pdf]
9."Current transport in InP/In0.5(Al0.6Ga0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy," C.V. Reddy, V. Narayanamurti, J.H. Ryou and R.D. Dupuis, Applied Physics Letters , Vol. 80 , No. 10 1770-1772 (March, 2002) [pdf]
10."Observations of conduction-band structure of 4H- and 6H-SiC," I. Shalish, B. Altfeder, and V. Narayanamurti, Phys. Rev. B , Vol. 65 , 037104-1-4 (2002) [pdf]
11."Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1-x)0.51P for visible light emitting diode and laser applications grown by metalorganic chemical vapor deposition," J.H. Ryou, R.D. Dupuis, G. Walter, N. Holonyak, Jr., D.T. Mathes, R. Hull, C.V. Reddy, and V. Narayanamurti, Journal of Applied Physics , Vol 91 , No 8, 5313-5320, (2002).
12."Nuclear Spin Based Memory and Logic in Quantum Hall Semiconductor Nanostructures for Quantum Computing Applications," R.G. Mani, W.B. Johnson, V. Narayanamurti, V. Privman, and Y-H. Zhang, Physica E , 12 , 152-156, (2002)
13."Nuclear Spin Memory and Logic in Quantum Hall Semicon. Nanostr. for Quantum Computing Applications," R. G. Mani, W. B. Johnson, V. Narayanamurti, V. Privman and Y. H. Zhang, Physica E 12, 152 (2002).
14."Manipulation and measurement of nuclear spin over the quantum Hall regime for quantum information processing," R. G. Mani, W. B. Johnson, and V. Narayanamurti, Superlattices and Microstructures 32, 261 (2002).
1."Can silicon dimers form logic gates?" Ian Appelbaum, Tairan Wang, Shanhui Fan, J.D. Joannopoulos and V. Narayanamurti, Nanotechnology , Vol. 12 , 391-393 (2001)
2."BEEM imaging and spectroscopy of buried structures in semiconductors," V. Narayanamurti and M. Kozhevnikov, Physics Reports , 34916 , 447-514, (2001) [pdf]
3."Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface," I.B. Altfeder, J.A. Golovchenko and V. Narayanamurti, Physical Review Letters , Vol. 87 , No. 5, 056801 (2001) [pdf]
4."Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition," J.H. Ryou and R.D. Dupuis, G. Walter, D.A. Kellogg and N. Holonyak, Jr., D.T. Mathes and R. Hull and C.V. Reddy and V. Narayanamurti, Applied Physics Letters , Vol 78 , No. 26, 4091 (2001)
5."High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor disposition," J.H. Ryou and R.D. Dupuis, D.T. Mathes and R. Hull, and C.V. Reddy and V. Narayanamurti, Applied Physics Letters , Vol. 78 , No. 22, 3526 (2001)
6."Influence of Nitrogen on the Band Structure of GaP: A Ballistic Electron Emission Spectroscopic Investigation," C.V. Reddy, R. E. Martinez and V. Narayanamurti, Electrochemical Society Proceeding , Vol. 2001-10 , 229-239, (2001)
7."Characterization of nanopipes/dislocations in silicon carbide using ballistic electron emission microscopy," C.V. Reddy and V. Narayanamurti, Journal of Applied Physics , Vol. 89 , No. 10, (2001)
8."InP Self-Assembled Quantum Dots Embedded in In0.3Ga0.2P Grown on GaAs Substrates by Metalorganic Chemical Vapor Disposition," Jae-Hyun Ryou and Russell Dupuis, David T. Mathes and Robert Hull, C.V. Reddy and Venkatesh Narayanamurti, David Kellogg, Gabriel Walter, Nick Holonyak Jr., The Proceedings of the International Conference on Indium Phosphide and Related Materials 2001 & MRS, Fall 2201 Meeting Proceedings
1."Proceedings of the Twelfth International Conference on Indium Phosphide and Related Materials," J.H. Ryou, R. D. Dupuis, C. V. Reddy, V. Narayanamurti, D.T. Mathes, and R. Hull, IEEE Catalog No. 00CH37107, (IEE, Piscataway, NJ, 2000) p.223.
2."Observation of Resonant Tunneling through InP Quantum Dots Using Ballistic Electron Emmission Microscopy," Chavva V. Reddy, Venkatesh Narayanamurti, Jae-Hyun Ryou, Uttiya Chowdhury and Russell Dupuis, Proceedings, Materials Research Society , Proc. 642 (2000)
3."Second Derivative Ballistic Electron Emission Spectrocopy in Au/(AlGa)As," M. Kozhevnikov, V. Narayanamurti, D.L. Smith, Yi-Jen Chiu, Materials Research Society Symp. Proc. 584 , 207 (2000)
4."Self-assembled III-phosphide quantum dots grown By metalorganic chemical vapor disposition," J.H. Ryou, U. Chowdhury, R.D. Dupuis, C.V. Reddy, V. Narayanamurti, D.T. Mathes, and R. Hull, Materials Research Society Symp. Proc. 583 , 39 (2000)
5."Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure," C.V. Reddy, V. Narayanamurti, J.H. Ryou, U. Chowdhury, and R.D. Dupuis, App. Phys. Lett. 77 , 1167 (2000).
6."Imaging and Local Current Transport Measurements of AlInP Quantum Dots Grown on GaP," C.V. Reddy, V. Narayanamurti, J.H. Ryou, U. Chowdhury, and R.D. Dupuis, App. Phys. Lett. 76 , 1437 (2000) [pdf]
7."Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy," M. Kozhevnikov, V. Narayanamurti, C.V. Reddy, H.P. Xin, C.W. Tu, A. Mascarenhas, and Y. Zhang, Phys. Rev. B Rapid Communication 61 , R7861 (2000-II) [pdf]
8."The role of BEEM for characterization of physical phenomena in semiconductors alloys and quantum structures," V. Narayanamurti and M. Kozhevnikov, Invited Review Paper to be published in the International Journal of High Speed Electronics and Systems 10 , 55 (2000).
9."Scattering Theory of Ballistic Electron Emission Microscopy at Nonepitaxial Interfaces," D.L. Smith, M. Kozhevnikov, E.Y. Lee, and V. Narayanamurti, Phys. Rev. B 61 , 13914 (2000).
1."Ordering-induced band structure effects in GaInP2 studied by Ballistic Electron Emission Microscopy," M. Kozhevnikov, V. Narayanamurti, A. Mascarenhas, Y. Zhang, J. M. Olson, and D. L. Smith, Appl. Phys. Lett. 75 , 1128 (1999). [pdf]
2."Effect of Electron Scattering on Second Derivative Ballistic Electron Emission Spectroscopy in Au/GaAs/AlGaAs Heterostructures," M. Kozhevnikov, V. Narayanamurti, C. Zheng, Yi-Jen Chiu, and D. L. Smith, Phys. Rev. Lett. 82 , 3677 (1999). [pdf]
3."Direct observation of localized high current densities in GaN films," Bräzel, M.A. Chin, and V. Narayanamurti, Appl. Phys. Lett. E. 74 , 2367 (1999). [pdf]
4."Staggered to straddling band lineups in InAs/Al(As,Sb)," S. Bhargava, H..-R.. Blank, E.Hall, M.A. Chin, H. Kroemer, and V. Narayanamurti, Applied Physics Letters 74 , 1135 (1999). [pdf]
1."Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs," M.E. Rubin, H.-R Blank, M.A. Chin, H. Kroemer, V. Narayanamurti, Physica E 2 , 682-684 (1998)
2."Measurement of the AlGaInAs/AlGaAs conduction band offset using Ballistic Electron Emission Spectroscopy," S. Bhargava, C. Zheng, J. Ko, M.A. Chin, L.A.Coldren, and V. Narayanamurti, Appl. Phys. Lett. 73 , 3271 (1998). [pdf]
3."Thermoelectric Effects in Submicron Heterostructure Barriers," A. Shakouri, E.Y. Lee, D.L. Smith, V. Narayanamurti, and J.E. Bowers, Microscale Thermophysical Engineering 2 , 37-47 (1998).
4."Ballistic Electron Emission Microscopy (BEEM) of novel semiconductor heterostructures and quantum dots," V. Narayanamurti, Invited Paper, San Jose, CA, SPIE Proceedings , 3287 , 152-166, (1998).
5."Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition," P.J. Hansen, Y.E. Strausser, A.H. Erickson, E.J. Tarsa, P.Kozodoy, E.G. Brazel, J.P. Ibbetsen, U. Mishra, V. Narayanamurti, S.P. DenBaars, and J.S. Speck, Appl. Phys. Lett. 72 (18), 2247-2249 (1998).
6."Ballistic-electron-emission microscopy of semiconductor heterostructures," L. D. Bell, and V. Narayanamurti, Current Opinion in Solid State & Materials Science 3 (1), 38-43 (1998).
7."Al(As,Sb) Heterobarriers on InAs: Growth, Structural Properties, and Electrical Transport," H.-R. Blank, S. Mathis, E. Hall, S. Bhargava, A. Behres, M. Henken, H. Kroemer, and V. Narayanamurti, J. Crystal Growth 187 , 18-28 (1998).
8."Theory of Ballistic Electron Emission Microscopy Nonepitaxial Metal/Semiconductor Interfaces," D.L. Smith, E.Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. 80 (11), 2433-2436 (1998).